- Title
- The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes
- Creators
- AP KnightsDJ MorrisonNG WrightCM JohnsonAG O'NeillS OrtollandKP HomewoodMA LourencoRM GwilliamPG Coleman
- Contributors
- SC BinariAA BurkMR MellochC NguyenMATERIALS RESEARCH SOCIETY (Publisher)
- Publication Details
- WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, Vol.572, pp.129-134
- Conference
- Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting (SAN FRANCISCO, CA, 05/04/1999 - 08/04/1999)
- Date published
- 01/01/1999
- Date submitted
- 17/05/2017
- Identifiers
- 99514861402346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, Vol.572, pp.129-134
Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 MRS Spring Meeting (SAN FRANCISCO, CA, 05/04/1999 - 08/04/1999)
01/01/1999
Metrics
33 Record Views