The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering

AJ Smith; SH Yeong; B Colombeau; BJ Sealy; RM Gwilliam

Back

The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering

Conference presentation

Peer reviewed

The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering

AJ Smith, SH Yeong, B Colombeau, BJ Sealy and RM Gwilliam

ION IMPLANTATION TECHNOLOGY 2008, Vol.1066, pp.38-41

17th International Conference on Ion Implantation Technology (Monterey, CA, 08/06/2008 - 13/06/2008)

05/11/2008

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Materials Science

Multidisciplinary

Physics

Applied

Engineering

Materials Science

Physics

Vacancy Engineering

Phosphorous

SOI

USJ

DIFFUSION

DEACTIVATION

SILICON

DOPANTS

Files and links (1)

url

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000262960800008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View

Author

Metrics

20 Record Views

Details

Title: The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering
Creators: AJ Smith
SH Yeong
B Colombeau
BJ Sealy
RM Gwilliam
Contributors: EG Seebauer
YV Kondratenko
SB Felch
A Jain
AMER INST PHYSICS
Publication Details: ION IMPLANTATION TECHNOLOGY 2008, Vol.1066, pp.38-41
Conference: 17th International Conference on Ion Implantation Technology (Monterey, CA, 08/06/2008 - 13/06/2008)
Date published: 05/11/2008
Date submitted: 17/05/2017
Identifiers: 99512485702346
Academic Unit: University of Surrey
Resource Type: Conference presentation

The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering

Abstract

Files and links (1)

Metrics

Details

Usage Policy