Abstract
Un‐patterned wafers were processed using low‐dose Indium or medium‐dose Germanium pre‐amorphization implants (PAI) followed by p‐type dopant implants of BF 2 or carborane (CBH). The wafers were then annealed by RTA (spike), laser anneal (LSA) or combination of LSA and spike. Active dopant distributions calculated from SIMS and sheet resistance measurements compared favorably with those determined by differential Hall, which is a challenging technique for shallow profiles. The trends in B diffusion behavior and activation are discussed in relation to the different implant damage budgets, damage evolution during the anneals and presence of fluorine. In particular, for low thermal budget LSA only anneals, CBH implants appear to give higher activation than BF 2 due to the absence of fluorine.