Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

M Zhao; A Karim; W-X Ni; CR Pidgeon; PJ Phillips; D Carder; BN Murdin; T Fromherz; DJ Paul

doi:10.1016/j.jlumin.2006.08.080

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Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

Conference presentation

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Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

M Zhao, A Karim, W-X Ni, CR Pidgeon, PJ Phillips, D Carder, BN Murdin, T Fromherz and DJ Paul

JOURNAL OF LUMINESCENCE, Vol.121(2), pp.403-408

Symposium on Si-based Photonics held at the EMRS 2006 Conference (Nice, FRANCE, 29/05/2006 - 02/06/2006)

01/12/2006

DOI: https://doi.org/10.1016/j.jlumin.2006.08.080

Abstract

Science & Technology

Physical Sciences

Optics

OPTICS

molecular beam epitaxy (MBE)

Si/SiGe

pump-probe spectroscopy

intersubband transition

lifetime

QUANTUM CASCADE STRUCTURES

RELAXATION

LASER

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Title: Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering
Creators: M Zhao
A Karim
W-X Ni
CR Pidgeon
PJ Phillips
D Carder
BN Murdin
T Fromherz
DJ Paul
Contributors: ELSEVIER SCIENCE BV (Publisher)
Publication Details: JOURNAL OF LUMINESCENCE, Vol.121(2), pp.403-408
Conference: Symposium on Si-based Photonics held at the EMRS 2006 Conference (Nice, FRANCE, 29/05/2006 - 02/06/2006)
Date published: 01/12/2006
Date submitted: 17/05/2017
Identifiers: 99514668702346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

Abstract

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