Silicon-based light emitting diode material studied under high pressure

AD Prins; Y Ishibashi; S Sasahara; J Nakahara; MA Lourenco; RM Gwilliam; T Kobayashi; A Nagata; KP Homewood

doi:10.1002/pssb.200405251

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Silicon-based light emitting diode material studied under high pressure

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Silicon-based light emitting diode material studied under high pressure

AD Prins, Y Ishibashi, S Sasahara, J Nakahara, MA Lourenco, RM Gwilliam, T Kobayashi, A Nagata and KP Homewood

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.241(14), pp.3387-3390

11th International Conference on High-Pressure Semiconductor Physics (HPSP-11) (Berkeley, CA, 02/08/2004 - 05/08/2004)

01/11/2004

DOI: https://doi.org/10.1002/pssb.200405251

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

HYDROSTATIC-PRESSURE

TEMPERATURE

DEPENDENCE

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Title: Silicon-based light emitting diode material studied under high pressure
Creators: AD Prins
Y Ishibashi
S Sasahara
J Nakahara
MA Lourenco
RM Gwilliam
T Kobayashi
A Nagata
KP Homewood
Contributors: WILEY-V C H VERLAG GMBH (Publisher)
Publication Details: PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol.241(14), pp.3387-3390
Conference: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11) (Berkeley, CA, 02/08/2004 - 05/08/2004)
Date published: 01/11/2004
Date submitted: 17/05/2017
Identifiers: 99511685302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Silicon-based light emitting diode material studied under high pressure

Abstract

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