Silicon Carbide Static Induction Transistor with Implanted Buried Gate

K Vassilevski; I Nikitina; A Horsfall; N Wright; AG O'Neill; R Gwilliam; CM Johnson

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Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Conference presentation

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Silicon Carbide Static Induction Transistor with Implanted Buried Gate

K Vassilevski, I Nikitina, A Horsfall, N Wright, AG O'Neill, R Gwilliam and CM Johnson

SILICON CARBIDE AND RELATED MATERIALS 2008, Vol.615-61, pp.735-738

7th European Conference on Silicon Carbide and Related Materials (Barcelona, SPAIN, 07/09/2008 - 11/09/2008)

01/01/2009

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Materials Science

Ceramics

Materials Science

Multidisciplinary

Engineering

Materials Science

SIT

BGSIT

ion implantation

specific on-resistance

JFET

MOBILITY

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Title: Silicon Carbide Static Induction Transistor with Implanted Buried Gate
Creators: K Vassilevski
I Nikitina
A Horsfall
N Wright
AG O'Neill
R Gwilliam
CM Johnson
Contributors: A PerezTomas
P Godignon
M Vellvehi
P Brosselard
TRANS TECH PUBLICATIONS LTD (Publisher)
Publication Details: SILICON CARBIDE AND RELATED MATERIALS 2008, Vol.615-61, pp.735-738
Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona, SPAIN, 07/09/2008 - 11/09/2008)
Date published: 01/01/2009
Date submitted: 17/05/2017
Identifiers: 99515668602346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Abstract

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