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SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation
Conference presentation   Peer reviewed

SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

LS Riley, S Hall, J Harris, J Fernandez, B Gallas, AGR Evans, JF Clarke, J Humphrey, RT Murray and C Jeynes
MICROELECTRONIC ENGINEERING, Vol.48(1-4), pp.227-230
11th Biennial Conference on Insulating Films on Semiconductors (KLOSTER BANZ, GERMANY, 16/06/1999 - 19/06/1999)
01/09/1999
DOI: https://doi.org/10.1016/S0167-9317(99)00376-7

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Nanoscience & Nanotechnology Optics Physics Applied Engineering Science & Technology - Other Topics Physics ENGINEERING ELECTRICAL & ELECTRONIC NANOSCIENCE & NANOTECHNOLOGY OPTICS PHYSICS APPLIED ELECTRON
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