- Title
- Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing
- Creators
- R BeanlandMA LourencoKP Homewood
- Contributors
- AG CullisJL HutchisonIOP PUBLISHING LTD (Publisher)
- Publication Details
- MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), pp.145-148
- Conference
- Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials (UNIV OXFORD, OXFORD, ENGLAND, 07/04/1997 - 10/04/1997)
- Date published
- 01/01/1997
- Date submitted
- 17/05/2017
- Identifiers
- 99514629102346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), pp.145-148
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials (UNIV OXFORD, OXFORD, ENGLAND, 07/04/1997 - 10/04/1997)
01/01/1997
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