Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001)

L Xu; PJ McNally; GDM Dilliway; NEB Cowern; C Jeynes; E Mendoza; P Ashburn; DM Bagnall

doi:10.1007/s10854-005-2320-6

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Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001)

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Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001)

L Xu, PJ McNally, GDM Dilliway, NEB Cowern, C Jeynes, E Mendoza, P Ashburn and DM Bagnall

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol.16(7), pp.469-474

5th International Conference on Materials for Microelectronics and Nanoengineering (Univ Southampton, Southampton, ENGLAND, 13/09/2004 - 14/09/2004)

01/07/2005

DOI: https://doi.org/10.1007/s10854-005-2320-6

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Materials Science

Multidisciplinary

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Condensed Matter

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Materials Science

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ENGINEERING

ELECTRICAL & ELECTRONIC

MATERIALS SCIENCE

MULTIDISCIPLINARY

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CONDENSED MATTER

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Title: Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001)
Creators: L Xu
PJ McNally
GDM Dilliway
NEB Cowern
C Jeynes
E Mendoza
P Ashburn
DM Bagnall
Contributors: SPRINGER (Publisher)
Publication Details: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol.16(7), pp.469-474
Conference: 5th International Conference on Materials for Microelectronics and Nanoengineering (Univ Southampton, Southampton, ENGLAND, 13/09/2004 - 14/09/2004)
Date published: 01/07/2005
Date submitted: 17/05/2017
Identifiers: 99514183202346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001)

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