Planar InAs photodiodes fabricated using He ion implantation

I Sandall; CH Tan; A Smith; R Gwilliam

doi:10.1109/IPCon.2012.6358542

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Conference presentation

Planar InAs photodiodes fabricated using He ion implantation

I Sandall, CH Tan, A Smith and R Gwilliam

2012 IEEE Photonics Conference, IPC 2012, pp.165-166

01/12/2012

DOI: https://doi.org/10.1109/IPCon.2012.6358542

Abstract

This work has shown that it is possible to use He implantation with InAs to produce highly resistive areas and that when combined with post implantation annealing, a sufficiently high resistive region can be formed to allow the fabrication of a planar photodiode. © 2012 IEEE.

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Title: Planar InAs photodiodes fabricated using He ion implantation
Creators: I Sandall
CH Tan
A Smith
R Gwilliam
Publication Details: 2012 IEEE Photonics Conference, IPC 2012, pp.165-166
Date published: 01/12/2012
Date submitted: 17/05/2017
Identifiers: 99513701702346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Planar InAs photodiodes fabricated using He ion implantation

Abstract

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