Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions

A Kozanecki; C Jeynes; BJ Sealy; W Jantsch; S Lanzerstorfer; W Heiss; G Prechtl

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Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions

A Kozanecki, C Jeynes, BJ Sealy, W Jantsch, S Lanzerstorfer, W Heiss and G Prechtl

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, Vol.264-2, pp.501-504

7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97) (STOCKHOLM, SWEDEN, 31/08/1997 - 05/09/1997)

01/01/1998

Abstract

Science & Technology

Technology

Materials Science

Multidisciplinary

Materials Science

Coatings & Films

Materials Science

erbium centres

ion implantation

photoluminescence

RBS

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Title: Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions
Creators: A Kozanecki
C Jeynes
BJ Sealy
W Jantsch
S Lanzerstorfer
W Heiss
G Prechtl
Contributors: G Pensl
H Morkoc
B Monemar
E Janzen
TRANSTEC PUBLICATIONS LTD (Publisher)
Publication Details: SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, Vol.264-2, pp.501-504
Conference: 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97) (STOCKHOLM, SWEDEN, 31/08/1997 - 05/09/1997)
Date published: 01/01/1998
Date submitted: 17/05/2017
Identifiers: 99511411302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Photoluminescence and backscattering characterization of 6H SiC implanted with erbium and oxygen ions

Abstract

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