Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator

JJ Hamilton; EJH Collart; M Bersani; D Giubertoni; S Gennaro; NS Bennett; NEB Cowern; KJ Kirkby

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Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator

Conference presentation

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Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator

JJ Hamilton, EJH Collart, M Bersani, D Giubertoni, S Gennaro, NS Bennett, NEB Cowern and KJ Kirkby

Ion Implantation Technology, Vol.866, pp.73-75

16th International Conference on Ion Implantation Technology (Marseille, FRANCE, 11/06/2006 - 16/06/2006)

01/01/2006

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

Condensed Matter

Physics

pre-amorphisation

Silicon-on-Insulator

rapid thermal annealing

dopant activation

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Title: Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator
Creators: JJ Hamilton
EJH Collart
M Bersani
D Giubertoni
S Gennaro
NS Bennett
NEB Cowern
KJ Kirkby
Contributors: KJ Kirkby
D Chivers
R Gwilliam
A Smith
AMER INST PHYSICS (Publisher)
Publication Details: Ion Implantation Technology, Vol.866, pp.73-75
Conference: 16th International Conference on Ion Implantation Technology (Marseille, FRANCE, 11/06/2006 - 16/06/2006)
Date published: 01/01/2006
Date submitted: 17/05/2017
Identifiers: 99516368002346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator

Abstract

Files and links (1)

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