- Title
- On fabrication of high concentration Mn doped Si by ion implantation: problem and challenge
- Creators
- N PengC JeynesRM GwilliamRP WebbF PanX Chen
- Contributors
- ELSEVIER SCIENCE BV (null)
- Publication Details
- 18TH INTERNATIONAL VACUUM CONGRESS (IVC-18), Vol.32, pp.408-411
- Conference
- 18th International Vacuum Congress (IVC)/International Conference on Nanoscience and Technology (ICNT)/14th International Conference on Surfaces Science (ICSS)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA) (Beijing, PEOPLES R CHINA, 23/08/2010 - 27/08/2010)
- Date published
- 01/01/2012
- Date submitted
- 23/10/2014
- Identifiers
- 99512875402346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
On fabrication of high concentration Mn doped Si by ion implantation: problem and challenge
18TH INTERNATIONAL VACUUM CONGRESS (IVC-18), Vol.32, pp.408-411
18th International Vacuum Congress (IVC)/International Conference on Nanoscience and Technology (ICNT)/14th International Conference on Surfaces Science (ICSS)/Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA) (Beijing, PEOPLES R CHINA, 23/08/2010 - 27/08/2010)
01/01/2012
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