Mid-infrared Light Emitting Diodes Based on Pentenary GaInAsPSb Alloys Grown by Liquid Phase Epitaxy

Conference presentation

KT Lai

8th International Conference on Mid-Infrared Optoelectronic Materials & Devices (Bad Ischl, Austria, 14/05/2007 - 16/05/2007)

14/05/2007

Abstract

Pentenary alloys

MIR photoluminescence

MIR Leds

Liquid Phase Epitaxy

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Title: Mid-infrared Light Emitting Diodes Based on Pentenary GaInAsPSb Alloys Grown by Liquid Phase Epitaxy
Creators: KT Lai
Conference: 8th International Conference on Mid-Infrared Optoelectronic Materials & Devices (Bad Ischl, Austria, 14/05/2007 - 16/05/2007)
Date published: 14/05/2007
Date submitted: 17/05/2017
Identifiers: 99512006302346
Academic Unit: University of Surrey
Resource Type: Conference presentation