Luminescence of Tm3+in dislocation engineered silicon substrates

MA Lourenço; L Wong; RM Gwilliam; KP Homewood

doi:10.1109/GROUP4.2010.5643395

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Conference presentation

Luminescence of Tm3+in dislocation engineered silicon substrates

MA Lourenço, L Wong, RM Gwilliam and KP Homewood

Proceedings of 7th IEEE International Conference on Group IV Photonics, pp.159-161

7th IEEE GFP (Beijing, China, 01/09/2010 - 03/09/2010)

2010

DOI: https://doi.org/10.1109/GROUP4.2010.5643395

Abstract

Photoluminescence at 1.2 to1.4 μm is demonstrated in dislocation engineered silicon substrates doped with Tm3+ leading to the development of forward biased light emitting devices operating at a turn-on voltage of only 1 V.

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Title: Luminescence of Tm3+in dislocation engineered silicon substrates
Creators: MA Lourenço
L Wong
RM Gwilliam
KP Homewood
Publication Details: Proceedings of 7th IEEE International Conference on Group IV Photonics, pp.159-161
Conference: 7th IEEE GFP (Beijing, China, 01/09/2010 - 03/09/2010)
Date published: 2010
Date submitted: 17/05/2017
Identifiers: 99511489902346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Luminescence of Tm3+in dislocation engineered silicon substrates

Abstract

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