Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers

AJ Smith; LD Antwis; SH Yeong; AP Knights; B Colombeau; BJ Sealy; RM Gwilliam

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Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers

Conference presentation

Peer reviewed

Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers

AJ Smith, LD Antwis, SH Yeong, AP Knights, B Colombeau, BJ Sealy and RM Gwilliam

ION IMPLANTATION TECHNOLOGY 2008, Vol.1066, pp.22-25

17th International Conference on Ion Implantation Technology (Monterey, CA, 08/06/2008 - 13/06/2008)

01/01/2008

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Materials Science

Multidisciplinary

Physics

Applied

Engineering

Materials Science

Physics

Vacancy Engineering

Leakage Measurements

Boron

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Title: Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers
Creators: AJ Smith
LD Antwis
SH Yeong
AP Knights
B Colombeau
BJ Sealy
RM Gwilliam
Contributors: EG Seebauer
YV Kondratenko
SB Felch
A Jain
AMER INST PHYSICS (Publisher)
Publication Details: ION IMPLANTATION TECHNOLOGY 2008, Vol.1066, pp.22-25
Conference: 17th International Conference on Ion Implantation Technology (Monterey, CA, 08/06/2008 - 13/06/2008)
Date published: 01/01/2008
Date submitted: 17/05/2017
Identifiers: 99512372002346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-type Layers

Abstract

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