Ion beam synthesized silicides: growth, characterization and devices

KP Homewood; KJ Reeson; RM Gwilliam; AK Kewell; MA Lourenco; G Shao; YL Chen; JS Sharpe; CN McKinty; T Butler

doi:10.1016/S0040-6090(00)01742-9

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Ion beam synthesized silicides: growth, characterization and devices

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Ion beam synthesized silicides: growth, characterization and devices

KP Homewood, KJ Reeson, RM Gwilliam, AK Kewell, MA Lourenco, G Shao, YL Chen, JS Sharpe, CN McKinty and T Butler

THIN SOLID FILMS, Vol.381(2), pp.188-193

46th Spring Meeting of the Japan-Society-of-Applied-Physics (CHIBA, JAPAN)

15/01/2001

DOI: https://doi.org/10.1016/S0040-6090(00)01742-9

Abstract

Science & Technology

Technology

Physical Sciences

Materials Science

Multidisciplinary

Materials Science

Coatings & Films

Physics

Applied

Physics

Condensed Matter

Materials Science

Physics

MATERIALS SCIENCE

COATINGS & FILMS

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

semiconducting silicides

ion beam synthesis

optoelectronic devices

SEMICONDUCTING FESI2 LAYERS

1.5 MU-M

PHASE-TRANSFORMATIONS

OPTICAL-PROPERTIES

BETA-FESI2

LUMINESCENCE

ALPHA

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Title: Ion beam synthesized silicides: growth, characterization and devices
Creators: KP Homewood
KJ Reeson
RM Gwilliam
AK Kewell
MA Lourenco
G Shao
YL Chen
JS Sharpe
CN McKinty
T Butler
Contributors: ELSEVIER SCIENCE SA (Publisher)
Publication Details: THIN SOLID FILMS, Vol.381(2), pp.188-193
Conference: 46th Spring Meeting of the Japan-Society-of-Applied-Physics (CHIBA, JAPAN)
Date published: 15/01/2001
Date submitted: 17/05/2017
Identifiers: 99512932902346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Ion beam synthesized silicides: growth, characterization and devices

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