Investigation of optical metastability in GaN using photoluminescence spectroscopy

BJ Ryan; MO Henry; E McGlynn; J Fryar

doi:10.1016/j.physb.2003.09.024

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Investigation of optical metastability in GaN using photoluminescence spectroscopy

Conference presentation

Peer reviewed

Investigation of optical metastability in GaN using photoluminescence spectroscopy

BJ Ryan, MO Henry, E McGlynn and J Fryar

PHYSICA B-CONDENSED MATTER, Vol.340, pp.452-456

22nd International Conference on Defects in Semiconductors (ICDS-22) (UNIV AARHUS, AARHUS, DENMARK, 28/07/2003 - 01/08/2003)

31/12/2003

DOI: https://doi.org/10.1016/j.physb.2003.09.024

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

metastability

GaN

defects

FT spectroscopy

UNDOPED GAN

YELLOW LUMINESCENCE

BAND LUMINESCENCE

DOPED GAN

DEFECTS

FILMS

VACANCIES

EPILAYERS

DECAY

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Title: Investigation of optical metastability in GaN using photoluminescence spectroscopy
Creators: BJ Ryan
MO Henry
E McGlynn
J Fryar
Contributors: ELSEVIER SCIENCE BV (Publisher)
Publication Details: PHYSICA B-CONDENSED MATTER, Vol.340, pp.452-456
Conference: 22nd International Conference on Defects in Semiconductors (ICDS-22) (UNIV AARHUS, AARHUS, DENMARK, 28/07/2003 - 01/08/2003)
Date published: 31/12/2003
Date submitted: 17/05/2017
Identifiers: 99514629302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Investigation of optical metastability in GaN using photoluminescence spectroscopy

Abstract

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