Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions

KS Zhuravlev; VA Kolosanov; AG Milekhin; VG Polovinkin; TS Shamirzaev; YN Rakov; YB Myakishev; J Fryar; E McGlynn; MO Henry

doi:10.1088/0268-1242/19/4/034

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Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions

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Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions

KS Zhuravlev, VA Kolosanov, AG Milekhin, VG Polovinkin, TS Shamirzaev, YN Rakov, YB Myakishev, J Fryar, E McGlynn and MO Henry

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.19(4), pp.S94-S95

13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) (Modena, ITALY, 21/07/2003 - 01/08/2003)

01/04/2004

DOI: https://doi.org/10.1088/0268-1242/19/4/034

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Title: Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions
Creators: KS Zhuravlev
VA Kolosanov
AG Milekhin
VG Polovinkin
TS Shamirzaev
YN Rakov
YB Myakishev
J Fryar
E McGlynn
MO Henry
Contributors: IOP PUBLISHING LTD (Publisher)
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.19(4), pp.S94-S95
Conference: 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13) (Modena, ITALY, 21/07/2003 - 01/08/2003)
Date published: 01/04/2004
Date submitted: 17/05/2017
Identifiers: 99514801202346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions

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