- Title
- Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures
- Creators
- A NejimC JeynesRP WebbNEB CowernCJ Patel
- Contributors
- TD delaRubiaS CoffaPA StolkCS RaffertyMATERIALS RESEARCH SOCIETY (Publisher)
- Publication Details
- DEFECTS AND DIFFUSION IN SILICON PROCESSING, Vol.469, pp.387-393
- Conference
- Symposium on Defects and Diffusion in Silicon Processing (SAN FRANCISCO, CA, 01/04/1997 - 04/04/1997)
- Date published
- 01/01/1997
- Date submitted
- 17/05/2017
- Identifiers
- 99515433102346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures
DEFECTS AND DIFFUSION IN SILICON PROCESSING, Vol.469, pp.387-393
Symposium on Defects and Diffusion in Silicon Processing (SAN FRANCISCO, CA, 01/04/1997 - 04/04/1997)
01/01/1997
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