InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes

Conference presentation

KT Lai

NARROW GAP SEMICONDUCTORS 2007, Vol.119, pp.129-131

13th International Conference on Narrow Gap Semiconductors (Guildford, UK, 08/07/2007 - 12/07/2007)

14/05/2008

Abstract

III-V semiconductors

Nanostructures

MBE

MIR Photoluminescene

url

http://www.springer.com/View

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Title: InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes
Creators: KT Lai
Contributors: Springer (Publisher)
Publication Details: NARROW GAP SEMICONDUCTORS 2007, Vol.119, pp.129-131
Conference: 13th International Conference on Narrow Gap Semiconductors (Guildford, UK, 08/07/2007 - 12/07/2007)
Date published: 14/05/2008
Date submitted: 17/05/2017
Identifiers: 99511872202346
Academic Unit: University of Surrey
Resource Type: Conference presentation