InGaAs-AlAs-InAlAs 2-3µm QWIPs operating at zero bias up to 270 K and in photoconductive mode up to 300K

Conference presentation

KT Lai

15th European Workshop on Heterostructure Technology (Manchester University, UK, 01/10/2006 - 04/10/2006)

01/10/2006

Abstract

QWIPs

strain-compensated

III-V semiconductors

Photoconductive

photovoltaic

near infrared

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Title: InGaAs-AlAs-InAlAs 2-3µm QWIPs operating at zero bias up to 270 K and in photoconductive mode up to 300K
Creators: KT Lai
Conference: 15th European Workshop on Heterostructure Technology (Manchester University, UK, 01/10/2006 - 04/10/2006)
Date published: 01/10/2006
Date submitted: 17/05/2017
Identifiers: 99514402402346
Academic Unit: University of Surrey
Resource Type: Conference presentation