Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs

Conference presentation

KT Lai

7th International Conference on Mid-Infrared Optoelectronic Materials & Devices (Lancaster University, UK, 12/09/2005 - 14/09/2005)

12/09/2005

Abstract

III-V Semiconductors

Strain-compensated

MBE

QWIPs

Intersubband Transitions

17 Record Views

Title: Highly-strained and Strain-compensated InGaAs-AlAs-InAlAs QWIPs
Creators: KT Lai
Conference: 7th International Conference on Mid-Infrared Optoelectronic Materials & Devices (Lancaster University, UK, 12/09/2005 - 14/09/2005)
Date published: 12/09/2005
Date submitted: 17/05/2017
Identifiers: 99514769902346
Academic Unit: University of Surrey
Resource Type: Conference presentation