Higher crystalline volume yields from excimer laser crystallization of amorphous silicon with an asymmetrical peak pulse profile

AADT Adikaari; NK Mudugamuwa; SRP Silva

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Higher crystalline volume yields from excimer laser crystallization of amorphous silicon with an asymmetrical peak pulse profile

AADT Adikaari, NK Mudugamuwa and SRP Silva

SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, Vol.31, pp.185-188

Symposium on Semiconductor Photonics - Nano-Structured Materials and Devices (Singapore, SINGAPORE, 01/07/2007 - 06/07/2007)

01/01/2008

Abstract

Science & Technology

Physical Sciences

Nanoscience & Nanotechnology

Optics

Science & Technology - Other Topics

excimer laser

crystallized silicon

asymmetric pulse

POLYCRYSTALLINE SILICON

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Title: Higher crystalline volume yields from excimer laser crystallization of amorphous silicon with an asymmetrical peak pulse profile
Creators: AADT Adikaari
NK Mudugamuwa
SRP Silva
Contributors: SJ Chua
JH Teng
O Wada
R DelaRue
XH Tang
TRANS TECH PUBLICATIONS LTD (Publisher)
Publication Details: SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, Vol.31, pp.185-188
Conference: Symposium on Semiconductor Photonics - Nano-Structured Materials and Devices (Singapore, SINGAPORE, 01/07/2007 - 06/07/2007)
Date published: 01/01/2008
Date submitted: 17/05/2017
Identifiers: 99513199202346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Higher crystalline volume yields from excimer laser crystallization of amorphous silicon with an asymmetrical peak pulse profile

Abstract

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