High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon

FD Auret; AR Peaker; VP Markevich; L Dobaczewski; RM Gwilliam

doi:10.1016/j.physb.2005.12.020

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High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon

Conference presentation

Peer reviewed

High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon

FD Auret, AR Peaker, VP Markevich, L Dobaczewski and RM Gwilliam

PHYSICA B-CONDENSED MATTER, Vol.376, pp.73-76

23rd International Conference on Defects in Semiconductors (Awaji Isl, JAPAN, 24/07/2005 - 29/07/2005)

01/04/2006

DOI: https://doi.org/10.1016/j.physb.2005.12.020

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

Laplace (high-resolution) DLTS

E-centers

silicon

electron irradiation

DEFECTS

SEMICONDUCTORS

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Title: High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon
Creators: FD Auret
AR Peaker
VP Markevich
L Dobaczewski
RM Gwilliam
Contributors: ELSEVIER SCIENCE BV (Publisher)
Publication Details: PHYSICA B-CONDENSED MATTER, Vol.376, pp.73-76
Conference: 23rd International Conference on Defects in Semiconductors (Awaji Isl, JAPAN, 24/07/2005 - 29/07/2005)
Date published: 01/04/2006
Date submitted: 17/05/2017
Identifiers: 99515729202346
Academic Unit: University of Surrey
Resource Type: Conference presentation

High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon

Abstract

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