Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Y Ishibashi; T Kobayashi; AD Prins; J Nakahara; MA Lourenco; RM Gwilliam; KP Homewood

doi:10.1002/pssb.200672525

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Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Conference presentation

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Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Y Ishibashi, T Kobayashi, AD Prins, J Nakahara, MA Lourenco, RM Gwilliam and KP Homewood

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.244(1), pp.402-406

12th International Conference on High Pressure Semiconductor Physics (HPSP-12) (Barcelona, SPAIN, 31/07/2006 - 03/08/2006)

01/01/2007

DOI: https://doi.org/10.1002/pssb.200672525

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

LIGHT-EMITTING-DIODES

TEMPERATURE-DEPENDENCE

HYDROSTATIC-PRESSURE

ROOM-TEMPERATURE

GAP

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Title: Excitation and pressure effects on photoluminescence from dislocation engineered silicon material
Creators: Y Ishibashi
T Kobayashi
AD Prins
J Nakahara
MA Lourenco
RM Gwilliam
KP Homewood
Contributors: WILEY-V C H VERLAG GMBH (Publisher)
Publication Details: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.244(1), pp.402-406
Conference: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) (Barcelona, SPAIN, 31/07/2006 - 03/08/2006)
Date published: 01/01/2007
Date submitted: 17/05/2017
Identifiers: 99514272002346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Excitation and pressure effects on photoluminescence from dislocation engineered silicon material

Abstract

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