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Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation
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Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

CF Chow, SP Wong, Y Gao, N Ke, Q Li, WY Cheung, MA Lourenco and KP Homewood
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol.124, pp.440-443
Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting (Strasbourg, FRANCE, 31/05/2005 - 03/06/2005)
05/12/2005

Abstract

Science & Technology Technology Physical Sciences Materials Science Multidisciplinary Physics Condensed Matter Materials Science Physics electroluminescence Si MOS structure FeSi2 BEAM-SYNTHESIZED BETA-FESI2 LIGHT-EMITTING DIODE MU-M LUMINESCENCE TEMPERATURE SILICON ORIGIN PHOTOLUMINESCENCE
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