Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon

S Gennaro; BJ Sealy; C Jeynes; R Gwilliam; EJH Collart; A Licciardello

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Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon

S Gennaro, BJ Sealy, C Jeynes, R Gwilliam, EJH Collart and A Licciardello

IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, pp.552-555

14th International Conference on Ion Implantation Technology (TAOS, NM, 18/09/2002 - 27/09/2002)

01/01/2003

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Manufacturing

Engineering

Electrical & Electronic

Physics

Applied

Physics

Condensed Matter

Engineering

Physics

component

ion implantation

dopant activation

ultra-shallow junctions

indium

SI

DIFFUSION

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Title: Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon
Creators: S Gennaro
BJ Sealy
C Jeynes
R Gwilliam
EJH Collart
A Licciardello
Contributors: B Brown
TL Alford
M Nastasi
MC Vella
IEEE (Publisher)
Publication Details: IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, pp.552-555
Conference: 14th International Conference on Ion Implantation Technology (TAOS, NM, 18/09/2002 - 27/09/2002)
Date published: 01/01/2003
Date submitted: 17/05/2017
Identifiers: 99510939002346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Effects of carbon content and annealing conditions on the electrical activation of indium implanted silicon

Abstract

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