- Title
- Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator
- Creators
- JJ HamiltonEJH CollartB ColombeauM BersaniD GiubertoniM KahNEB CowernKJ Kirkby
- Contributors
- BJ PawlakKS JonesSB FelchM HaneMATERIALS RESEARCH SOCIETY (Publisher)
- Publication Details
- Doping Engineering for Device Fabrication, Vol.912, pp.45-50
- Conference
- Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting (San Francisco, CA, 18/04/2006 - 19/04/2006)
- Date published
- 01/01/2006
- Date submitted
- 17/05/2017
- Identifiers
- 99516382302346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
Effect of B dose and Ge prearnorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator
Doping Engineering for Device Fabrication, Vol.912, pp.45-50
Symposium on Sub Second Rapid Thermal Processing for Device Fabrication held at the 2006 MRS Spring Meeting (San Francisco, CA, 18/04/2006 - 19/04/2006)
01/01/2006
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