- Title
- Breakdown characterisation of HEMTs and MESFETs based on a new thermally driven gate model
- Creators
- L AlbashaCM SnowdenRD Pollard
- Contributors
- I E E E (Publisher)
- Publication Details
- SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, pp.277-280
- Conference
- 1997 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 97) (CAMBRIDGE, MA, 08/09/1997 - 10/09/1997)
- Date published
- 01/01/1997
- Date submitted
- 16/05/2017
- Identifiers
- 99512014402346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
Breakdown characterisation of HEMTs and MESFETs based on a new thermally driven gate model
SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, pp.277-280
1997 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 97) (CAMBRIDGE, MA, 08/09/1997 - 10/09/1997)
01/01/1997
Metrics
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