Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes

MA Lourenco; M Milosavljevic; G Shao; RM Gwilliam; KP Homewood

doi:10.1016/j.tsf.2005.09.036

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Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes

Conference presentation

Peer reviewed

Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes

MA Lourenco, M Milosavljevic, G Shao, RM Gwilliam and KP Homewood

THIN SOLID FILMS, Vol.504(1-2), pp.36-40

3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials (Singapore, SINGAPORE, 03/07/2005 - 08/07/2005)

10/05/2006

DOI: https://doi.org/10.1016/j.tsf.2005.09.036

Abstract

Science & Technology

Technology

Physical Sciences

Materials Science

Multidisciplinary

Materials Science

Coatings & Films

Physics

Applied

Physics

Condensed Matter

Materials Science

Physics

MATERIALS SCIENCE

COATINGS & FILMS

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

silicon

electroluminescence

dislocation engineered

light emitting devices

ELECTROLUMINESCENCE

DEVICES

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Title: Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes
Creators: MA Lourenco
M Milosavljevic
G Shao
RM Gwilliam
KP Homewood
Contributors: ELSEVIER SCIENCE SA (Publisher)
Publication Details: THIN SOLID FILMS, Vol.504(1-2), pp.36-40
Conference: 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials (Singapore, SINGAPORE, 03/07/2005 - 08/07/2005)
Date published: 10/05/2006
Date submitted: 17/05/2017
Identifiers: 99515137302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes

Abstract

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