An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model

L Albasha; RG Johnson; CM Snowden; RD Pollard

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An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model

L Albasha, RG Johnson, CM Snowden and RD Pollard

1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, pp.471-474

24th IEEE International Symposium on Compound Semiconductors (SAN DIEGO, CA, 08/09/1997 - 11/09/1997)

01/01/1998

Abstract

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Materials Science

Physics

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Title: An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model
Creators: L Albasha
RG Johnson
CM Snowden
RD Pollard
Contributors: M Melloch
MA Reed
IEEE (Publisher)
Publication Details: 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, pp.471-474
Conference: 24th IEEE International Symposium on Compound Semiconductors (SAN DIEGO, CA, 08/09/1997 - 11/09/1997)
Date published: 01/01/1998
Date submitted: 16/05/2017
Identifiers: 99514185502346
Academic Unit: University of Surrey
Resource Type: Conference presentation

An investigation of breakdown in power HEMTs and MESFETs utilising an advanced temperature-dependent physical model

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