- Title
- A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
- Creators
- MA LourencoAP KnightsKP HomewoodRM GwilliamPJ SimpsonP Mascher
- Contributors
- ELSEVIER SCIENCE BV (Publisher)
- Publication Details
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.175, pp.300-304
- Conference
- 12th International Conference on Ion Beam Modification of Materials (IBMM2000) (CANELA, BRAZIL, 03/09/2000 - 08/09/2000)
- Date published
- 01/04/2001
- Date submitted
- 17/05/2017
- Identifiers
- 99513735702346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.175, pp.300-304
12th International Conference on Ion Beam Modification of Materials (IBMM2000) (CANELA, BRAZIL, 03/09/2000 - 08/09/2000)
01/04/2001
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