1.1 to 1.6 μm silicon light emitting diodes and optical gain

KP Homewood; MA Lourenço; RM Gwilliam

doi:10.1109/GROUP4.2010.5643347

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Conference presentation

1.1 to 1.6 μm silicon light emitting diodes and optical gain

KP Homewood, MA Lourenço and RM Gwilliam

Proceedings of IEEE 7th International Conference on Group IV Photonics GFP, pp.302-304

7th IEEE GFP (Beijing, China, 01/09/2010 - 03/09/2010)

2010

DOI: https://doi.org/10.1109/GROUP4.2010.5643347

Abstract

We report silicon LEDs showing light emission from 1.1 to 1.6 μm and demonstrate optical gain by incorporating optically active impurities. Nano-engineering enables room temperature operation. As one exemplar, we show that erbium, with local strain engineering provides useful optical emission and gain at 1.5 μm.

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Title: 1.1 to 1.6 μm silicon light emitting diodes and optical gain
Creators: KP Homewood
MA Lourenço
RM Gwilliam
Publication Details: Proceedings of IEEE 7th International Conference on Group IV Photonics GFP, pp.302-304
Conference: 7th IEEE GFP (Beijing, China, 01/09/2010 - 03/09/2010)
Date published: 2010
Date submitted: 17/05/2017
Identifiers: 99513078902346
Academic Unit: University of Surrey
Resource Type: Conference presentation

1.1 to 1.6 μm silicon light emitting diodes and optical gain

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