Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

GM Crean; C Jeynes; MG Somekh; RP Webb

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Journal article

Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

GM Crean, C Jeynes, MG Somekh and RP Webb

European Solid-State Device Research Conference, pp.929-932

01/01/1989

Abstract

© 1989 Springer-Verlag Heidelberg. © 1989 Springer-Verlag Bcrbn Heidelberg. All Rights Reserved.This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.

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Title: Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis
Creators: GM Crean
C Jeynes
MG Somekh
RP Webb
Publication Details: European Solid-State Device Research Conference, pp.929-932
Publication Date: 01/01/1989
Identifiers: 99513840802346
Academic Unit: University of Surrey
Resource Type: Journal article

Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

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