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Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers
Journal article

Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers

T Higashi, SJ Sweeney, AF Phillips, AR Adams, EP O'Reilly, T Uchida and T Fujii
Conference Digest - IEEE International Semiconductor Laser Conference, pp.61-62
01/12/1998

Abstract

We investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInAs/InP MQW lasers, and found that compared with GaInAsP/InP devices the higher characteristic temperature was caused by a reduction of the non-radiative recombination current.

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